Micro Commercial Components - BSS123K-TP

  1. Home
  2. Micro Commercial Components - BSS123K-TP
BSS123K-TP by Micro Commercial Components

Image shown is a representation only.

Manufacturer Micro Commercial Components
Manufacturer's Part Number BSS123K-TP
Description Small Signal Field-Effect Transistors; Minimum DS Breakdown Voltage: 100 V; Maximum Time At Peak Reflow Temperature (s): 10; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: 9 ohm; Peak Reflow Temperature (C): 260;
Datasheet BSS123K-TP Datasheet
NAME DESCRIPTION
Other Names: BSS123K-TPMSCT
BSS123K-TPMSDKR
BSS123K-TPMSTR
Minimum DS Breakdown Voltage: 100 V
Maximum Time At Peak Reflow Temperature (s): 10
Maximum Drain Current (ID): .17 A
Peak Reflow Temperature (C): 260
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Drain-Source On Resistance: 9 ohm
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N7002PW,115 by NXP Semiconductors

2N7002PW,115

NXP Semiconductors

2N7002PW,115 by NXP Semiconductors is a single N-channel FET with max drain current of 0.31A and power dissipation of 0.83W. Ideal for applications requiring high temperature resistance up to 150°C, it features metal-oxide semiconductor technology and surface mount configuration.
BSS123,215 by Nexperia

BSS123,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
AO3401A by Alpha & Omega Semiconductor

AO3401A

Alpha & Omega Semiconductor

AO3401A by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 4A ID and 0.05 ohm RDS(on), suitable for various electronic devices.
FDG6332C by Onsemi

FDG6332C

Onsemi

The Onsemi FDG6332C is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include max drain current of 0.7A, min DS breakdown voltage of 20V, and max power dissipation of 0.3W.
IRFD110PBF by Vishay Siliconix

IRFD110PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): IN-LINE; Transistor Element Material: SILICON;
FDC658P by Fairchild Semiconductor

FDC658P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS670S2LH6327XTSA1 by Infineon Technologies

BSS670S2LH6327XTSA1

Infineon Technologies

Infineon's BSS670S2LH6327XTSA1 is a N-CHANNEL FET with 55V DS breakdown voltage, 0.54A ID, and 0.825 ohm RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
MMBF170LT1 by Onsemi

MMBF170LT1

Onsemi

MMBF170LT1 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. This small outline transistor has a peak reflow temp of 235°C and can withstand temperatures from -55 to 150°C.
BS170G by Onsemi

BS170G

Onsemi

BS170G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it has a max power dissipation of 0.35W and can withstand temperatures up to 150°C.
BSS84PWH6327 by Infineon Technologies

BSS84PWH6327

Infineon Technologies

BSS84PWH6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, 0.15A max drain current, and 8 ohm max on resistance. It is used in small outline packages for applications requiring low power dissipation and high operating temperatures up to 150°C.
IRLML2402TRPBF by International Rectifier

IRLML2402TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Maximum Time At Peak Reflow Temperature (s): 30; No. of Terminals: 3;
BSS138WQ-7-F by Diodes Incorporated

BSS138WQ-7-F

Diodes Incorporated

BSS138WQ-7-F by Diodes Inc. is a small signal N-channel FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max power dissipation of 0.2W and can handle a max drain current of 0.2A.
MMBF4117 by Fairchild Semiconductor

MMBF4117

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;
2N7002W by Weitron Technology

2N7002W

Weitron Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
BSS139H6327XTSA1 by Infineon Technologies

BSS139H6327XTSA1

Infineon Technologies

Infineon's BSS139H6327XTSA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 30 ohm RDS(on), and 3.3pF Crss. Ideal for depletion mode applications, it features a built-in diode and GULL WING terminals in a small outline package.
2N7002 by Diotec Semiconductor Ag

2N7002

Diotec Semiconductor Ag

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;
BSS138LT3 by Leshan Radio

BSS138LT3

Leshan Radio

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PMV65XP,215 by Nexperia

PMV65XP,215

Nexperia

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .076 ohm; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1;
MMBF170Q-7-F by Diodes Incorporated

MMBF170Q-7-F

Diodes Incorporated

Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
NDS331N/D87Z by National Semiconductor

NDS331N/D87Z

National Semiconductor

NDS331N/D87Z by National Semiconductor is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.21 ohm Drain-Source Resistance, and 1.3A Drain Current. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.