Micro Commercial Components - MMSS8550HE3-H-TP

  1. Home
  2. Micro Commercial Components - MMSS8550HE3-H-TP
MMSS8550HE3-H-TP by Micro Commercial Components

Image shown is a representation only.

Manufacturer Micro Commercial Components
Manufacturer's Part Number MMSS8550HE3-H-TP
Description Small Signal Bipolar Transistors; Maximum Collector Current (IC): 1.5 A; Maximum Time At Peak Reflow Temperature (s): 10; Maximum Collector-Emitter Voltage: 25 V; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
Datasheet MMSS8550HE3-H-TP Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 1.5 A
Maximum Collector-Emitter Voltage: 25 V
Maximum Time At Peak Reflow Temperature (s): 10
Peak Reflow Temperature (C): 260
Minimum DC Current Gain (hFE): 200
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N2222A by Zetex Plc

2N2222A

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N3906 by Nec Electronics America

2N3906

Nec Electronics America

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;
2N2907A by STMicroelectronics

2N2907A

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N3904 by Fairchild Semiconductor

2N3904

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2907A by Semitronics

2N2907A

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N2222AUB by Silicon Transistor

2N2222AUB

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2907A by Swampscott Electronics

2N2907A

Swampscott Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N2905A by Texas Instruments

2N2905A

Texas Instruments

2N2905A by Texas Instruments is a PNP BJT transistor with max. power dissipation of 0.6W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn-on/off times (45ns/100ns) and high transition frequency (200MHz).
2N3906 by STMicroelectronics

2N3906

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3906 by Itt Semiconductor

2N3906

Itt Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-40 by NXP Semiconductors

BC817-40

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
2N3904TFR by Onsemi

2N3904TFR

Onsemi

2N3904TFR by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A. Operates in temp range -55 to 150°C, with turn on time of 70ns and turn off time of 250ns.
2N3904TF by Onsemi

2N3904TF

Onsemi

2N3904TF by Onsemi is a NPN bipolar junction transistor with max. collector-emitter voltage of 40V and max. collector current of 0.2A. It has a min. DC current gain of 30, making it suitable for switching applications with a nominal transition frequency of 300MHz. The package style is cylindrical with matte tin terminal finish, ideal for through-hole mounting in various electronic circuits.
2N3904 by Space Power Electronics

2N3904

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222A by Kodenshi Auk

MMBT2222A

Kodenshi Auk

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Package Shape: RECTANGULAR;
BC846B by Vishay Semiconductors

BC846B

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
MMBT2907A by Changzhou Galaxy Century Microelectronics

MMBT2907A

Changzhou Galaxy Century Microelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
BC847C,215 by Nexperia

BC847C,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
MMBT3906 by Rectron

MMBT3906

Rectron

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; JESD-30 Code: R-PDSO-G3; Maximum Turn On Time (ton): 70 ns;
2N2222A by Minilogic Device

2N2222A

Minilogic Device

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;