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Manufacturer | Microchip Technology |
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Manufacturer's Part Number | 1N6461US |
Description | TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND; |
Datasheet | 1N6461US Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | GLASS |
Config: | SINGLE |
Diode Type: | TRANS VOLTAGE SUPPRESSOR DIODE |
Sub-Category: | Transient Suppressors |
Surface Mount: | YES |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 2 |
Terminal Position: | END |
Package Style (Meter): | LONG FORM |
Maximum Non Repetitive Peak Reverse Power Dissipation: | 500 W |
Technology: | AVALANCHE |
JESD-30 Code: | O-LELF-R2 |
Minimum Breakdown Voltage: | 5.6 V |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | WRAP AROUND |
Polarity: | UNIDIRECTIONAL |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | ISOLATED |
Maximum Repetitive Peak Reverse Voltage: | 5 V |
Maximum Clamping Voltage: | 9 V |
JESD-609 Code: | e0 |
Minimum Operating Temperature: | -55 Cel |
Diode Element Material: | SILICON |
Qualification: | Not Qualified |
Maximum Power Dissipation: | 2.5 W |
Additional Features: | HIGH RELIABILITY, METALLURGICALLY BODED |