1N6508 by Microchip Technology | Diodes

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Manufacturer	Microchip Technology
Manufacturer's Part Number	1N6508
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 14; Surface Mount: NO; Package Shape: RECTANGULAR;
Datasheet	1N6508 Datasheet
In Stock	133

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Config:	COMPLEX
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Surface Mount:	NO
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
Diode Element Material:	SILICON
No. of Terminals:	14
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Technology:	AVALANCHE
JESD-30 Code:	R-CDIP-T14
Minimum Breakdown Voltage:	60 V
No. of Elements:	16
Package Shape:	RECTANGULAR
Maximum Power Dissipation:	.6 W
Terminal Form:	THROUGH-HOLE
Additional Features:	HIGH RELIABILITY, LOW CAPACITANCE
Polarity:	UNIDIRECTIONAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
133	-	-

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FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

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TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;