Image shown is a representation only.
| Manufacturer | Microchip Technology |
|---|---|
| Manufacturer's Part Number | 1N8152USE3 |
| Description | TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND; |
| Datasheet | 1N8152USE3 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | GLASS |
| Maximum Time At Peak Reflow Temperature (s): | 10 |
| Config: | SINGLE |
| Diode Type: | TRANS VOLTAGE SUPPRESSOR DIODE |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 2 |
| Terminal Position: | END |
| Package Style (Meter): | LONG FORM |
| Maximum Non Repetitive Peak Reverse Power Dissipation: | 150 W |
| Technology: | AVALANCHE |
| JESD-30 Code: | O-LELF-R2 |
| Minimum Breakdown Voltage: | 10.4 V |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WRAP AROUND |
| Polarity: | UNIDIRECTIONAL |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | ISOLATED |
| Maximum Repetitive Peak Reverse Voltage: | 9 V |
| Maximum Clamping Voltage: | 15.6 V |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Diode Element Material: | SILICON |
| Maximum Power Dissipation: | 1 W |
| Additional Features: | HIGH RELIABILITY |
| Reference Standard: | IEC-61000-4-2, 4-4 |
| Peak Reflow Temperature (C): | 260 |
