1N823A by Microchip Technology | Diodes

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Manufacturer	Microchip Technology
Manufacturer's Part Number	1N823A
Description	ZENER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet	1N823A Datasheet
In Stock	180

NAME	DESCRIPTION
Package Body Material:	GLASS
Config:	SINGLE
Diode Type:	ZENER DIODE
Maximum Voltage Temperature Coefficient:	.31 mV/Cel
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	2
Terminal Position:	AXIAL
Package Style (Meter):	LONG FORM
Technology:	ZENER
JESD-30 Code:	O-LALF-W2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
JEDEC-95 Code:	DO-204AA
JESD-609 Code:	e0
Minimum Operating Temperature:	-65 Cel
Maximum Voltage Tolerance:	4.84 %
Diode Element Material:	SILICON
Qualification:	Not Qualified
Nominal Reference Voltage:	6.2 V
Maximum Power Dissipation:	.5 W
Additional Features:	METALLURGICALLY BONDED

Pricing (USD)

Qty.	Unit Price	Ext. Price
180	-	-

87832-1420 by Molex is a 14-contact board connector with 0.079" pitch, suitable for commercial applications. It features matte tin over nickel finish, glass-filled polyamide insulator, and polarization key for easy assembly. Withstanding voltage of 1400VAC and operating temperature range from -55 to 105°C make it reliable for various electronic devices.

ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.

RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.

OPERATIONAL AMPLIFIER; Temperature Grade: AUTOMOTIVE; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;