Microchip Technology - 2N6287

  1. Home
  2. Microchip Technology - 2N6287
2N6287 by Microchip Technology

Image shown is a representation only.

Manufacturer Microchip Technology
Manufacturer's Part Number 2N6287
Description PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 20 A; No. of Elements: 1;
Datasheet 2N6287 Datasheet
In Stock2,840
NAME DESCRIPTION
Nominal Transition Frequency (fT): 4 MHz
Package Body Material: METAL
Maximum Collector Current (IC): 20 A
Configuration: DARLINGTON
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-204AA
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 300
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 100 V
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Maximum Operating Temperature: 175 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,840 $58.570 $166,338.800

Popular Products

Category Top Products

TIP127 by Central Semiconductor

TIP127

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
2N3055 by Solitron Devices

2N3055

Solitron Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BUX87 by NXP Semiconductors

BUX87

NXP Semiconductors

The NXP Semiconductors BUX87 is a single NPN power BJT transistor with a max VCEsat of 1V, ideal for switching applications. With a max collector-emitter voltage of 450V and a max power dissipation of 20W, it operates at temperatures up to 150°C. This silicon-based transistor has a min DC current gain of 26 and can handle a max collector current of 0.5A.
NJVMJD127T4G by Onsemi

NJVMJD127T4G

Onsemi

NJVMJD127T4G by Onsemi is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has 100V VCEO, 8A IC, and 20W power dissipation. Ideal for amplifier applications due to its high hFE of 100 and operating temperature range from -65 to 150°C.
TIP35C by SPC TECHNOLOGY/ MULTICOMP

TIP35C

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP35C by Bourns

TIP35C

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;
BUX87 by Baneasa S A

BUX87

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE; Package Style (Meter): FLANGE MOUNT;
TIP122 by Kec

TIP122

Kec

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
D44H11G by Onsemi

D44H11G

Onsemi

D44H11G by Onsemi is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 10A. It is commonly used for switching applications due to its high power dissipation of 50W and low min DC current gain (hFE) of 40.
BD140-16 by Continental Device India

BD140-16

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
TIP125 by Crimson Semiconductor

TIP125

Crimson Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 5 A; No. of Terminals: 3;
TIP112 by Micro Commercial Components

TIP112

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON;
TIP125 by Semitronics

TIP125

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP117 by Power Innovations

TIP117

Power Innovations

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; Terminal Position: SINGLE;
BD679AS by Fairchild Semiconductor

BD679AS

Fairchild Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP35C by New Jersey Semiconductor Products

TIP35C

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; No. of Elements: 1; Transistor Element Material: SILICON;
MJE15035G by Onsemi

MJE15035G

Onsemi

MJE15035G by Onsemi is a PNP BJT transistor with 50W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Operates at up to 150°C with a min DC current gain of 10 (hFE).
TIP31C by Continental Device India

TIP31C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
TIP50 by Fairchild Semiconductor

TIP50

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BD140-16 by STMicroelectronics

BD140-16

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;