Microchip Technology - APT1003RSFLLG/TR

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APT1003RSFLLG/TR by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number APT1003RSFLLG/TR
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
Datasheet APT1003RSFLLG/TR Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 425 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4 A
Maximum Pulsed Drain Current (IDM): 16 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 2
Minimum DS Breakdown Voltage: 1000 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 3 ohm
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