Microchip Technology - APT10045LFLLG

APT10045LFLLG by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number APT10045LFLLG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 565 W; No. of Elements: 1; JESD-609 Code: e1;
Datasheet APT10045LFLLG Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 23 A
Maximum Pulsed Drain Current (IDM): 92 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 3
Maximum Power Dissipation (Abs): 565 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .46 ohm
Avalanche Energy Rating (EAS): 2500 mJ
JEDEC-95 Code: TO-264AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Minimum DS Breakdown Voltage: 1000 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 23 A
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