APT10050LVRG by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	APT10050LVRG
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: HIGH VOLTAGE; Maximum Pulsed Drain Current (IDM): 84 A; Maximum Drain-Source On Resistance: .5 ohm;
Datasheet	APT10050LVRG Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	21 A
Maximum Pulsed Drain Current (IDM):	84 A
Surface Mount:	NO
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.5 ohm
Avalanche Energy Rating (EAS):	2500 mJ
JEDEC-95 Code:	TO-264AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e1
Minimum DS Breakdown Voltage:	1000 V
Qualification:	Not Qualified
Additional Features:	HIGH VOLTAGE

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