Microchip Technology - APT50M60L2VRG

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APT50M60L2VRG by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number APT50M60L2VRG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .06 ohm;
Datasheet APT50M60L2VRG Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 77 A
Maximum Pulsed Drain Current (IDM): 308 A
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .06 ohm
Avalanche Energy Rating (EAS): 3200 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
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