APTMC120AM55CT1AG by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	APTMC120AM55CT1AG
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; JESD-30 Code: R-XUFM-X12; Minimum DS Breakdown Voltage: 1200 V;
Datasheet	APTMC120AM55CT1AG Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	55 A
Maximum Pulsed Drain Current (IDM):	110 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	12
Maximum Power Dissipation (Abs):	250 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X12
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	125 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.049 ohm
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Minimum DS Breakdown Voltage:	1200 V
Maximum Drain Current (Abs) (ID):	55 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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