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| Manufacturer | Microchip Technology |
|---|---|
| Manufacturer's Part Number | ARF463AP1G |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; No. of Terminals: 3; Maximum Operating Temperature: 150 Cel; |
| Datasheet | ARF463AP1G Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | 9 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 180 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | SOURCE |
| Moisture Sensitivity Level (MSL): | 1 |
| JEDEC-95 Code: | TO-247AD |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e1 |
| Minimum DS Breakdown Voltage: | 500 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 9 A |
