AT21CS11-UU0B-T by Microchip Technology | Memory ICs

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Manufacturer	Microchip Technology
Manufacturer's Part Number	AT21CS11-UU0B-T
Description	EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 4; Package Code: VFBGA; Package Shape: UNSPECIFIED; Operating Mode: SYNCHRONOUS;
Datasheet	AT21CS11-UU0B-T Datasheet
In Stock	1,230

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	128X8
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Seated Height:	.355 mm
Minimum Supply Voltage (Vsup):	2.7 V
Surface Mount:	YES
Maximum Write Cycle Time (tWC):	5 ms
No. of Terminals:	4
No. of Words:	128 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	X-PBGA-B4
Package Shape:	UNSPECIFIED
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	VFBGA
Serial Bus Type:	1-WIRE
Memory Density:	1024 bit
Memory IC Type:	EEPROM
Minimum Operating Temperature:	-40 Cel
Memory Width:	8
No. of Functions:	1
No. of Words Code:	128
Peak Reflow Temperature (C):	NOT SPECIFIED
Parallel or Serial:	SERIAL
Terminal Pitch:	.4 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	4.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,230	-	-

RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;

The Onsemi NC7WZ17P6X is a logic gate with 2 functions, featuring a propagation delay of 13.1 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85°C and has a max power supply current of 100mA. With Schmitt Trigger technology and small outline packaging, it suits compact electronic designs requiring fast signal processing.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JEDEC-95 Code: TO-18; Maximum Collector-Emitter Voltage: 40 V;