ATMEGA32L-8AU-SL383 by Microchip Technology | Peripheral ICs

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Manufacturer	Microchip Technology
Manufacturer's Part Number	ATMEGA32L-8AU-SL383
Description	MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE;
Datasheet	ATMEGA32L-8AU-SL383 Datasheet
In Stock	1,302

NAME	DESCRIPTION
Minimum Supply Voltage:	2.7 V
Package Body Material:	PLASTIC/EPOXY
Nominal Supply Voltage:	3 V
Maximum Seated Height:	1.2 mm
Surface Mount:	YES
ADC Channels:	YES
No. of Terminals:	44
DMA Channels:	NO
Terminal Position:	QUAD
Package Style (Meter):	FLATPACK, THIN PROFILE
No. of I/O Lines:	32
Address Bus Width:	0
Technology:	CMOS
JESD-30 Code:	S-PQFP-G44
Maximum Clock Frequency:	8 MHz
Package Shape:	SQUARE
Terminal Form:	GULL WING
Maximum Operating Temperature:	85 Cel
Package Code:	TQFP
Width:	10 mm
Speed:	8 rpm
Peripheral IC Type:	MICROCONTROLLER, RISC
Maximum Supply Voltage:	5.5 V
External Data Bus Width:	0
Bit Size:	8
DAC Channels:	NO
Minimum Operating Temperature:	-40 Cel
Length:	10 mm
PWM Channels:	YES
ROM Programmability:	FLASH
Terminal Pitch:	.8 mm
Temperature Grade:	INDUSTRIAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,302	-	-

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;

FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.