Microchip Technology - DN2535N3-G

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DN2535N3-G by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number DN2535N3-G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
Datasheet DN2535N3-G Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .12 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 25 ohm
Maximum Feedback Capacitance (Crss): 5 pF
JEDEC-95 Code: TO-92
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 350 V
Qualification: Not Qualified
Additional Features: HIGH INPUT IMPEDANCE
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