Microchip Technology - JAN2N2905

  1. Home
  2. Microchip Technology - JAN2N2905
JAN2N2905 by Microchip Technology

Image shown is a representation only.

Manufacturer Microchip Technology
Manufacturer's Part Number JAN2N2905
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; JESD-30 Code: O-MBCY-W3; Maximum Turn On Time (ton): 45 ns;
Datasheet JAN2N2905 Datasheet
NAME DESCRIPTION
Package Body Material: METAL
Maximum Collector Current (IC): .6 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 45 ns
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
Maximum Turn Off Time (toff): 300 ns
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Maximum Operating Temperature: 200 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-39
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 30
JESD-609 Code: e0
Qualification: Qualified
Maximum Collector-Emitter Voltage: 40 V
Reference Standard: MIL-19500/290K
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N3055- by Ge Industrial Solutions

2N3055-

Ge Industrial Solutions

Small Signal Bipolar Transistors;
MMBT3904 by Yangzhou Yangjie Electronics

MMBT3904

Yangzhou Yangjie Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Moisture Sensitivity Level (MSL): 1;
2N3904 by Space Power Electronics

2N3904

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3904 by Tt Electronics Plc

2N3904

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 70 ns;
BC807-40-7-F by Diodes Incorporated

BC807-40-7-F

Diodes Incorporated

BC807-40-7-F by Diodes Inc. is a PNP BJT transistor with 3 terminals, hFE of 170, and max IC of 0.5A. Ideal for switching applications, it has a max VCE of 45V and operates up to 150°C. This surface-mount device in a small outline package is made of silicon with matte tin finish.
BC847B by Fairchild Semiconductor

BC847B

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC547B by Central Semiconductor

BC547B

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Package Shape: ROUND;
MMBT3906 by STMicroelectronics

MMBT3906

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2907(A) by Digitron Semiconductors

2N2907(A)

Digitron Semiconductors

2N2907(A) by Digitron Semiconductors is a PNP BJT transistor with VCEsat of 0.4V, hFE of 100, and IC of 0.6A. Ideal for switching applications due to its fast ton of 45ns and toff of 100ns. Operates at a max temp of 175°C with a max VCE of 60V.
SMMBT3904LT1G by Onsemi

SMMBT3904LT1G

Onsemi

SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
2N2222A by Onsemi

2N2222A

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
2N2222A by Semitronics

2N2222A

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC817-25 by Diotec Semiconductor Ag

BC817-25

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;
PMBT2369,215 by NXP Semiconductors

PMBT2369,215

NXP Semiconductors

NXP Semiconductors' PMBT2369,215 is a NPN BJT transistor for switching applications. It has a VCEsat of 0.25V, hFE of 20, and IC of 0.2A. With a max operating temperature of 150°C, it offers fast turn-on/off times (10ns/20ns) and high transition frequency (500MHz).
BC547BBU by Fairchild Semiconductor

BC547BBU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
MMBT2222ALT1 by Db Lectro

MMBT2222ALT1

Db Lectro

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
2N3904TFR by Rochester Electronics

2N3904TFR

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
2N2907A by Vishay Intertechnology

2N2907A

Vishay Intertechnology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; JESD-30 Code: O-MBCY-W3; JEDEC-95 Code: TO-18;
2N2222A by Crystalonics

2N2222A

Crystalonics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC817-25 by National Semiconductor

BC817-25

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;