Microchip Technology - JANSF2N2920

  1. Home
  2. Microchip Technology - JANSF2N2920
JANSF2N2920 by Microchip Technology

Image shown is a representation only.

Manufacturer Microchip Technology
Manufacturer's Part Number JANSF2N2920
Description NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Maximum Collector Current (IC): .03 A; Maximum Collector-Emitter Voltage: 60 V; Terminal Position: BOTTOM;
NAME DESCRIPTION
Package Body Material: METAL
Maximum Collector Current (IC): .03 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 300
No. of Terminals: 6
Maximum Collector-Emitter Voltage: 60 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W6
No. of Elements: 2
Package Shape: ROUND
Terminal Form: WIRE
Reference Standard: MIL-19500; RH - 300K Rad(Si)
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC547B by Rectron

BC547B

Rectron

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
NSM4002MR6T1G by Onsemi

NSM4002MR6T1G

Onsemi

NSM4002MR6T1G by Onsemi is a NPN BJT with hFE of 100, IC of 0.5A, and fT of 100MHz. Ideal for surface mount applications in electronics requiring high-speed signal amplification up to 150°C.
SMBT2222AE6327HTSA1 by Infineon Technologies

SMBT2222AE6327HTSA1

Infineon Technologies

SMBT2222AE6327HTSA1 by Infineon is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers fast turn-on/off times of 35ns/285ns.
BC817-40 by Rectron

BC817-40

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 250;
PIMN31,115 by NXP Semiconductors

PIMN31,115

NXP Semiconductors

PIMN31,115 by NXP Semiconductors is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max power dissipation of 0.42W, and operates at temperatures up to 150°C. Ideal for switching applications in small outline packages with gull wing terminals.
BC817-40 by SPC TECHNOLOGY/ MULTICOMP

BC817-40

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;
BC547AT&A by Continental Device India

BC547AT&A

Continental Device India

BC547AT&A by Continental Device India is a NPN BJT transistor with hFE of 110, IC of 0.1A, and fT of 300MHz. It is used for switching applications due to its max VCE of 45V and Ptot of 0.625W in a cylindrical package.
BC817-25 by Samsung

BC817-25

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING;
MMBT2222A,215 by Nexperia

MMBT2222A,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Qualification: Not Qualified;
MMBT2907AWT1G by Onsemi

MMBT2907AWT1G

Onsemi

MMBT2907AWT1G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.15W, and max. collector-emitter voltage of 60V. Ideal for amplifier applications, it has a min. DC current gain of 50 and operates at up to 150°C, making it suitable for various electronic circuits.
2N2222A by General Transistor

2N2222A

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC547BTA by Fairchild Semiconductor

BC547BTA

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC847C by Diotec Semiconductor Ag

BC847C

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BC817-40 by Vishay Semiconductors

BC817-40

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 250;
2N3906 by Microsemi

2N3906

Microsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847C by Changzhou Galaxy Century Microelectronics

BC847C

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SBC817-40LT3G by Onsemi

SBC817-40LT3G

Onsemi

SBC817-40LT3G by Onsemi is a NPN BJT transistor with 250 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications, it has a max power dissipation of 0.3W and operates up to 150°C. Suitable for surface mount designs with Gull Wing terminals in a small outline package.
BC547B by Secos

BC547B

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;
BC817-40 by Kingtronics International

BC817-40

Kingtronics International

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;
2N2905A by International Devices

2N2905A

International Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;