Microchip Technology - JANSR2N3700UB/TR

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JANSR2N3700UB/TR by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number JANSR2N3700UB/TR
Description Small Signal Bipolar Transistors;
Datasheet JANSR2N3700UB/TR Datasheet
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2N2219A by Micro Electronics

2N2219A

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC857C,215 by Nexperia

BC857C,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
MMBT3904 by Changzhou Galaxy Century Microelectronics

MMBT3904

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2N3906 by Weitron Technology

2N3906

Weitron Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): CYLINDRICAL;
BC847-C by Infineon Technologies

BC847-C

Infineon Technologies

BC847-C by Infineon Technologies is a NPN BJT transistor with hFE of 420, fT of 250 MHz, and IC of 0.1 A. It is used in amplifier applications due to its max VCE of 45V and operating temp of 150°C. This surface-mount transistor has a Gull Wing terminal form in a small outline package.
2N3906 by Hi-tron Semiconductor

2N3906

Hi-tron Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2907A by Swampscott Electronics

2N2907A

Swampscott Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC817.25 by Central Semiconductor

BC817.25

Central Semiconductor

BC817.25 by Central Semiconductor is a NPN BJT with 160 min hFE and 45V VCEO, ideal for small signal applications. With a max power dissipation of 0.3W and fT of 200MHz, it's suitable for high-frequency circuits in compact designs. This Gull Wing package transistor operates up to 150°C, making it versatile for various electronic devices.
MMBT2907A by Samsung

MMBT2907A

Samsung

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
2N2222A by STMicroelectronics

2N2222A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
BC847C by Itt Semiconductor

BC847C

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBT2222ALT1 by Db Lectro

MMBT2222ALT1

Db Lectro

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
BC817-25 by Kec

BC817-25

Kec

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .8 A;
BC547AT&A by Continental Device India

BC547AT&A

Continental Device India

BC547AT&A by Continental Device India is a NPN BJT transistor with hFE of 110, IC of 0.1A, and fT of 300MHz. It is used for switching applications due to its max VCE of 45V and Ptot of 0.625W in a cylindrical package.
2N2907A by Microchip Technology

2N2907A

Microchip Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; No. of Elements: 1;
BC547C by Rectron

BC547C

Rectron

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: BOTTOM;
2N2219A by Asi Semiconductor

2N2219A

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
MMBT2222A by Fairchild Semiconductor

MMBT2222A

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 1 A;
2N2905A by Hi-tron Semiconductor

2N2905A

Hi-tron Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
SMMBT3906LT1G by Onsemi

SMMBT3906LT1G

Onsemi

SMMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and IC of 0.2A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance, 260°C peak reflow temp, and 250MHz fT.