Microchip Technology - JANTX2N5416

  1. Home
  2. Microchip Technology - JANTX2N5416
JANTX2N5416 by Microchip Technology

Image shown is a representation only.

Manufacturer Microchip Technology
Manufacturer's Part Number JANTX2N5416
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1 A; JESD-30 Code: O-MBCY-W4; Package Body Material: METAL;
Datasheet JANTX2N5416 Datasheet
NAME DESCRIPTION
Package Body Material: METAL
Maximum Collector Current (IC): 1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 1000 ns
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 4
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
Maximum Turn Off Time (toff): 10000 ns
JESD-30 Code: O-MBCY-W4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Maximum Operating Temperature: 200 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-5
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 30
JESD-609 Code: e0
Minimum Operating Temperature: -65 Cel
Qualification: Qualified
Maximum Collector-Emitter Voltage: 300 V
Reference Standard: MILITARY STANDARD (USA)
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SBC817-25LT1G by Onsemi

SBC817-25LT1G

Onsemi

SBC817-25LT1G by Onsemi is a NPN BJT with 45V VCEO, 0.5A IC, and 160 hFE. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 100MHz fT. Features GULL WING terminals in a SMALL OUTLINE package.
BC817-40 by Fairchild Semiconductor

BC817-40

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
2N2222ACSM by Tt Electronics Plc

2N2222ACSM

Tt Electronics Plc

2N2222ACSM by Tt Electronics Plc is a NPN BJT transistor with hFE of 30, Vce of 50V, and fT of 300MHz. Ideal for switching applications due to its fast ton of 35ns and toff of 300ns. Suitable for surface mount designs with small outline package style.
2N2222A by Diotec Semiconductor Ag

2N2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
2N3906 by Allegro MicroSystems

2N3906

Allegro MicroSystems

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC846B by Siemens

BC846B

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2222A by Baneasa S A

2N2222A

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;
2N2219A by Texas Instruments

2N2219A

Texas Instruments

2N2219A by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.8W, max. collector-emitter voltage of 40V, and max. collector current of 0.8A. It is commonly used for switching applications due to its fast turn on time (35ns) and high transition frequency (300MHz).
2N3904 by Vishay Sprague

2N3904

Vishay Sprague

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; No. of Terminals: 3; Package Shape: ROUND;
BC817-25W,115 by Nexperia

BC817-25W,115

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;
2N3904TA by Rochester Electronics

2N3904TA

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;
2N2222A by National Semiconductor

2N2222A

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;
BC847B by Nexperia

BC847B

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N2222A by Central Semiconductor

2N2222A

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
BC817-25 by Micro Commercial Components

BC817-25

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;
MMBT2222ALT1 by National Semiconductor

MMBT2222ALT1

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;
BC817-40 by Diodes Incorporated

BC817-40

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
JANTX2N2222A by National Semiconductor

JANTX2N2222A

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector-Base Capacitance: 8 pF; Package Style (Meter): CYLINDRICAL;
2N2907A by Raytheon Semiconductor

2N2907A

Raytheon Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N3906 by Samsung

2N3906

Samsung

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;