JANTXV2N2920 by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	JANTXV2N2920
Description	NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .03 A;
Datasheet	JANTXV2N2920 Datasheet
In Stock	41

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	60 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	.03 A
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
JEDEC-95 Code:	TO-78
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	300
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	6
Qualification:	Qualified
Maximum Power Dissipation (Abs):	.3 W
Maximum Collector-Emitter Voltage:	60 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W6
No. of Elements:	2
Package Shape:	ROUND
Terminal Form:	WIRE
Maximum Operating Temperature:	175 Cel
Reference Standard:	MIL-19500/355J

Pricing (USD)

Qty.	Unit Price	Ext. Price
41	-	-

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;