Microchip Technology - LND150N8-G

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LND150N8-G by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number LND150N8-G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;
Datasheet LND150N8-G Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .03 A
Maximum Pulsed Drain Current (IDM): .03 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1.6 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Power Dissipation Ambient: 1.6 W
Maximum Drain-Source On Resistance: 1000 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 1 pF
JEDEC-95 Code: TO-243AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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