MAP4KE39AE3 by Microchip Technology | Diodes

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Manufacturer	Microchip Technology
Manufacturer's Part Number	MAP4KE39AE3
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet	MAP4KE39AE3 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	SINGLE
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Terminal Position:	AXIAL
Package Style (Meter):	LONG FORM
Maximum Non Repetitive Peak Reverse Power Dissipation:	400 W
Technology:	AVALANCHE
JESD-30 Code:	O-PALF-W2
Minimum Breakdown Voltage:	37.1 V
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Polarity:	UNIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Breakdown Voltage:	41 V
Maximum Repetitive Peak Reverse Voltage:	33.3 V
JEDEC-95 Code:	DO-204AL
JESD-609 Code:	e3
Minimum Operating Temperature:	-65 Cel
Diode Element Material:	SILICON
Qualification:	Not Qualified
Maximum Power Dissipation:	1.13 W

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