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| Manufacturer | Microchip Technology |
|---|---|
| Manufacturer's Part Number | MRT100KP75AE3/TR |
| Description | TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND; |
| Datasheet | MRT100KP75AE3/TR Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Config: | SINGLE |
| Diode Type: | TRANS VOLTAGE SUPPRESSOR DIODE |
| Sub-Category: | Transient Suppressors |
| Surface Mount: | NO |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 2 |
| Terminal Position: | AXIAL |
| Package Style (Meter): | LONG FORM |
| Maximum Non Repetitive Peak Reverse Power Dissipation: | 100000 W |
| Technology: | AVALANCHE |
| JESD-30 Code: | O-PALF-W2 |
| Minimum Breakdown Voltage: | 83.3 V |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Polarity: | UNIDIRECTIONAL |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Moisture Sensitivity Level (MSL): | 1 |
| Maximum Breakdown Voltage: | 92.1 V |
| Maximum Repetitive Peak Reverse Voltage: | 75 V |
| Maximum Clamping Voltage: | 122 V |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -65 Cel |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Nominal Breakdown Voltage: | 87.7 V |
| Maximum Power Dissipation: | 1.61 W |
| Additional Features: | HIGH RELIABILITY |
