MSC017SMA120J by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	MSC017SMA120J
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 278 W; JESD-30 Code: R-PUFM-X4; Minimum Operating Temperature: -55 Cel;
Datasheet	MSC017SMA120J Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	88 A
Maximum Pulsed Drain Current (IDM):	280 A
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	278 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.022 ohm
Avalanche Energy Rating (EAS):	3500 mJ
Other Names:	150-MSC017SMA120J
Maximum Feedback Capacitance (Crss):	12 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	1200 V
Maximum Drain Current (Abs) (ID):	88 A

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