Microchip Technology - MSC025SMA120B

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MSC025SMA120B by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number MSC025SMA120B
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Drain Current (Abs) (ID): 103 A; Maximum Operating Temperature: 175 Cel;
Datasheet MSC025SMA120B Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 103 A
Maximum Pulsed Drain Current (IDM): 275 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 500 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .031 ohm
JEDEC-95 Code: TO-247AD
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 1200 V
Maximum Drain Current (Abs) (ID): 103 A
Peak Reflow Temperature (C): NOT SPECIFIED
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