MSCSM120AM042CD3AG by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	MSCSM120AM042CD3AG
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2031 W; Maximum Drain-Source On Resistance: .0052 ohm; Maximum Operating Temperature: 175 Cel;
Datasheet	MSCSM120AM042CD3AG Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	495 A
Maximum Pulsed Drain Current (IDM):	990 A
Surface Mount:	NO
No. of Terminals:	7
Maximum Power Dissipation (Abs):	2031 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X7
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.0052 ohm
Maximum Feedback Capacitance (Crss):	.15 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Minimum DS Breakdown Voltage:	1200 V
Maximum Drain Current (Abs) (ID):	495 A

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