MSCSM170HM45CT3AG by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	MSCSM170HM45CT3AG
Description	N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 4; Maximum Drain-Source On Resistance: .045 ohm; Operating Mode: ENHANCEMENT MODE;
Datasheet	MSCSM170HM45CT3AG Datasheet

NAME	DESCRIPTION
Other Names:	150-MSCSM170HM45CT3AG
Package Body Material:	UNSPECIFIED
Configuration:	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	10 pF
Maximum Drain Current (ID):	64 A
Maximum Pulsed Drain Current (IDM):	130 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
No. of Terminals:	25
Minimum DS Breakdown Voltage:	1700 V
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X25
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.045 ohm

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