Image shown is a representation only.
| Manufacturer | Microchip Technology |
|---|---|
| Manufacturer's Part Number | MXSMBG10AE3 |
| Description | TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | MXSMBG10AE3 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 10 |
| Config: | SINGLE |
| Diode Type: | TRANS VOLTAGE SUPPRESSOR DIODE |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 2 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Non Repetitive Peak Reverse Power Dissipation: | 600 W |
| Technology: | AVALANCHE |
| JESD-30 Code: | R-PDSO-G2 |
| Minimum Breakdown Voltage: | 11.1 V |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Polarity: | UNIDIRECTIONAL |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Maximum Breakdown Voltage: | 12.3 V |
| Maximum Repetitive Peak Reverse Voltage: | 10 V |
| JEDEC-95 Code: | DO-215AA |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -65 Cel |
| Diode Element Material: | SILICON |
| Maximum Power Dissipation: | 1.38 W |
| Reference Standard: | IEC-61000-4-2, 4-4, 4-5; MIL-19500 |
| Peak Reflow Temperature (C): | 260 |
