PIC32MZ0512EFK100-E/GJX by Microchip Technology | Peripheral ICs

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Manufacturer	Microchip Technology
Manufacturer's Part Number	PIC32MZ0512EFK100-E/GJX
Description	MICROCONTROLLER, RISC; Temperature Grade: AUTOMOTIVE; Terminal Form: BALL; No. of Terminals: 100; Package Code: TFBGA; Package Shape: SQUARE;
Datasheet	PIC32MZ0512EFK100-E/GJX Datasheet
In Stock	841

NAME	DESCRIPTION
Minimum Supply Voltage:	2.1 V
Package Body Material:	PLASTIC/EPOXY
Integrated Cache:	YES
Surface Mount:	YES
On Chip Data RAM Width:	8
No. of DMA Channels:	12
Address Bus Width:	0
Screening Level:	AEC-Q100; TS 16949
Technology:	CMOS
RAM Words:	131072
Maximum Clock Frequency:	64 MHz
Package Shape:	SQUARE
Terminal Form:	BALL
Package Code:	TFBGA
No. of External Interrupts:	5
Bit Size:	32
DAC Channels:	NO
PWM Channels:	YES
Additional Features:	IT ALSO HAS 12-CH DEDICATED DMA AND 160KBYTE OF BOOT FLASH MEMORY
Connectivity:	CAN(2), ETHERNET, I2C(5), I2S(6), IRDA, LIN, PMP, SPI(6), UART(6), USB
ROM Programmability:	FLASH
Analog To Digital Convertors:	40-Ch 12-Bit
Terminal Pitch:	.65 mm
CPU Family:	PIC32
Nominal Supply Voltage:	3.3 V
Maximum Seated Height:	1.06 mm
Maximum Supply Current:	150 mA
Terminal Finish:	TIN SILVER COPPER
ADC Channels:	YES
No. of Terminals:	100
No. of Timers:	9
DMA Channels:	YES
Terminal Position:	BOTTOM
Format:	FLOATING POINT
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
No. of I/O Lines:	78
JESD-30 Code:	S-PBGA-B100
ROM Words:	524288
Maximum Operating Temperature:	125 Cel
Width:	7 mm
Data EEPROM Size:	0
Speed:	180 rpm
Peripheral IC Type:	MICROCONTROLLER, RISC
Maximum Supply Voltage:	3.6 V
RAM Bytes:	131072
Low Power Mode:	YES
Boundary Scan:	YES
External Data Bus Width:	0
Peripherals:	BOD, COMPARATOR(2), DMA(12), POR, PWM(9), RTCC, TIMER(9), WDT
JESD-609 Code:	e1
Minimum Operating Temperature:	-40 Cel
Length:	7 mm
On Chip Program ROM Width:	8
Temperature Grade:	AUTOMOTIVE

Pricing (USD)

Qty.	Unit Price	Ext. Price
841	-	-

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;

Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;