TC6320TG-G by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	TC6320TG-G
Description	N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G8; Minimum Operating Temperature: -55 Cel;
Datasheet	TC6320TG-G Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	25 ns
Sub-Category:	Power Field-Effect Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	35 ns
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	7 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	30 pF
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified
Reference Standard:	TS 16949
Peak Reflow Temperature (C):	260

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