Microchip Technology - TN0604N3-GP002

TN0604N3-GP002 by Microchip Technology

Image shown is a representation only.

Manufacturer Microchip Technology
Manufacturer's Part Number TN0604N3-GP002
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Additional Features: HIGH INPUT IMPEDANCE; Terminal Form: THROUGH-HOLE;
Datasheet TN0604N3-GP002 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 50 pF
Maximum Drain Current (ID): .7 A
JEDEC-95 Code: TO-92
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -55 Cel
No. of Terminals: 3
Minimum DS Breakdown Voltage: 40 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: HIGH INPUT IMPEDANCE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .74 W
Maximum Drain-Source On Resistance: .75 ohm
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products