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Manufacturer | Microchip Technology |
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Manufacturer's Part Number | TN0620N3-GP003 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 200 V; Transistor Application: SWITCHING; Terminal Form: THROUGH-HOLE; |
Datasheet | TN0620N3-GP003 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 35 pF |
Maximum Drain Current (ID): | .25 A |
JEDEC-95 Code: | TO-92 |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 200 V |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-PBCY-T3 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Drain-Source On Resistance: | 6 ohm |