Microchip Technology - TP2104N3-G-P003

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TP2104N3-G-P003 by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number TP2104N3-G-P003
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .74 W; Maximum Drain Current (ID): .175 A; No. of Elements: 1;
Datasheet TP2104N3-G-P003 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 10 pF
Maximum Drain Current (ID): .175 A
JEDEC-95 Code: TO-92
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -55 Cel
No. of Terminals: 3
Minimum DS Breakdown Voltage: 40 V
Maximum Power Dissipation (Abs): .74 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .74 W
Maximum Drain-Source On Resistance: 6 ohm
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