TP5335K1-G-VAO by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	TP5335K1-G-VAO
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL;
Datasheet	TP5335K1-G-VAO Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.085 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.36 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	70 ohm
Maximum Feedback Capacitance (Crss):	2 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	350 V
Reference Standard:	AEC-Q101

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