Microchip Technology - UFS180JE3/TR13

UFS180JE3/TR13 by Microchip Technology

Image shown is a representation only.

Manufacturer	Microchip Technology
Manufacturer's Part Number	UFS180JE3/TR13
Description	RECTIFIER DIODE; Surface Mount: YES; Diode Element Material: SILICON; No. of Elements: 1; Maximum Reverse Recovery Time: .06 us; Maximum Repetitive Peak Reverse Voltage: 800 V;
Datasheet	UFS180JE3/TR13 Datasheet

UFS180JE3/TR13 Technical Details

NAME	DESCRIPTION
No. of Phases:	1
Maximum Forward Voltage (VF):	1.2 V
Config:	SINGLE
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	1 A
Maximum Repetitive Peak Reverse Voltage:	800 V
Sub-Category:	Rectifier Diodes
Surface Mount:	YES
Maximum Non Repetitive Peak Forward Current:	25 A
Diode Element Material:	SILICON
Package Style (Meter):	SMALL OUTLINE
No. of Elements:	1
Maximum Reverse Recovery Time:	.06 us

Popular Products

M24308/2-1F

TE Connectivity

TE Connectivity's M24308/2-1F D-Sub Connector features 9 contacts, 2 rows, and a shell size of 1/E. With a rated current of 7.5A, it operates b/w -55°C to 125°C. Ideal for cable mounting applications, this connector has a steel shell with cadmium finish and uses crimp termination for female contact pins.

MMBT3906LT1G

Onsemi

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

SMBJ18CA

Silicon Standard

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ULN2803A

Sanken Electric

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;

BSS138W-7-F

Diodes Incorporated

Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.

1N4148

Itt Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAV99

Sensitron Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

261

Micronetics

Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;

BSS138

Taitron Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;

2N7002

Vishay Intertechnology

2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.

Category Top Products