Microchip Technology - VN10KN3-GP002

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VN10KN3-GP002 by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number VN10KN3-GP002
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): .31 A;
Datasheet VN10KN3-GP002 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .31 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 5 ohm
Maximum Feedback Capacitance (Crss): 5 pF
JEDEC-95 Code: TO-92
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Maximum Drain Current (Abs) (ID): .31 A
Peak Reflow Temperature (C): NOT SPECIFIED
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