Micron Technology - EBJ21UE8BAU0-AG-E

  1. Home
  2. Micron Technology - EBJ21UE8BAU0-AG-E
EBJ21UE8BAU0-AG-E by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number EBJ21UE8BAU0-AG-E
Description DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;
Datasheet EBJ21UE8BAU0-AG-E Datasheet
In Stock2,172
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Organization: 256MX64
Access Mode: DUAL BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.425 V
Surface Mount: NO
Terminal Finish: GOLD
No. of Terminals: 204
No. of Words: 268435456 words
Terminal Position: ZIG-ZAG
Package Style (Meter): MICROELECTRONIC ASSEMBLY
Technology: CMOS
JESD-30 Code: R-XZMA-N204
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: DIMM
No. of Ports: 1
Memory Density: 17179869184 bit
Self Refresh: YES
Memory IC Type: DDR DRAM MODULE
JESD-609 Code: e4
Minimum Operating Temperature: 0 Cel
Memory Width: 64
No. of Functions: 1
Qualification: Not Qualified
No. of Words Code: 256M
Nominal Supply Voltage / Vsup (V): 1.5
Additional Features: AUTO/SELF REFRESH
Temperature Grade: OTHER
Maximum Supply Voltage (Vsup): 1.575 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,172 - -

Popular Products

Category Top Products

MT40A1G8SA-062EAAT:E by Micron Technology

MT40A1G8SA-062EAAT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EAAT:E is a DDR4 DRAM with 1.2V supply, 1600MHz clock frequency, and 1GX8 organization. It operates synchronously in common I/O mode for automotive applications at temperatures ranging from -40 to 105°C.
AS4C64M16D3LB-12BINTR by Alliance Memory

AS4C64M16D3LB-12BINTR

Alliance Memory

Alliance Memory's AS4C64M16D3LB-12BINTR is a DDR3L DRAM with 64MX16 organization and 1.35V nominal voltage. It operates in synchronous mode, has self-refresh capability, and is suitable for industrial applications requiring high memory density.
MT48LC8M16A2P-6A:GTR by Micron Technology

MT48LC8M16A2P-6A:GTR

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:GTR is a 8MX16 Synchronous DRAM with a memory density of 134217728 bit. It operates at a max temperature of 70°C and has a supply voltage range of 3V to 3.6V. This DRAM is commonly used in applications requiring high-speed data storage and retrieval, such as computer systems and networking devices.
IS42S16800F-6TLI by Integrated Silicon Solution

IS42S16800F-6TLI

Integrated Silicon Solution

IS42S16800F-6TLI by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 54 terminals, and supports self-refresh mode. Ideal for industrial applications requiring fast memory access and low standby current consumption.
AS4C16M16SA-6BIN by Alliance Memory

AS4C16M16SA-6BIN

Alliance Memory

Alliance Memory's AS4C16M16SA-6BIN is a 16MX16 Synchronous DRAM with 166 MHz clock frequency, suitable for industrial applications. Featuring self-refresh and common I/O type, it operates at 3.3V with a memory density of 268MB. Ideal for systems requiring fast access times and high memory capacity.
MT48LC8M16A2TG-75IT:GTR by Micron Technology

MT48LC8M16A2TG-75IT:GTR

Micron Technology

Micron Technology's MT48LC8M16A2TG-75IT:GTR is a 3.3V, 8MX16 Synchronous DRAM with 8388608 words and 134217728 bit memory density. Operating in industrial temperature range, it features self-refresh capability and offers fast access time of 5.4 ns. Ideal for applications requiring high-speed data processing and reliable memory performance.
K4H561638H-UCB3 by Samsung

K4H561638H-UCB3

Samsung

Samsung's K4H561638H-UCB3 DDR1 DRAM features 16MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.
MT40A2G8AG-062EAUT:F by Micron Technology

MT40A2G8AG-062EAUT:F

Micron Technology

Micron Technology's MT40A2G8AG-062EAUT:F is a DDR4 DRAM with 2GX8 organization, operating at a max clock frequency of 1600 MHz. It has a memory density of 17.18 Gb and is suitable for applications requiring high-speed synchronous memory.
K4B2G0846C-HCH9 by Samsung

K4B2G0846C-HCH9

Samsung

Samsung's K4B2G0846C-HCH9 DDR3 DRAM features 256MX8 organization, 667 MHz clock frequency, and 2147483648 bit memory density. Ideal for applications requiring high-speed data processing and storage in devices like computers and servers.
MT48LC8M16A2P-75IT by Micron Technology

MT48LC8M16A2P-75IT

Micron Technology

MT48LC8M16A2P-75IT by Micron Technology is a 8MX16 Synchronous DRAM with a memory density of 134217728 bit. It operates at a max clock frequency of 133 MHz and has a max access time of 5.4 ns. This memory module is commonly used in industrial applications requiring high-speed data storage and retrieval.
K4S281632K-UC60 by Samsung

K4S281632K-UC60

Samsung

Samsung's K4S281632K-UC60 is a 8MX16 DRAM with 200 MHz clock frequency. It operates synchronously at 3.3V, featuring 70°C max temp. Ideal for applications requiring high-speed memory access and low power consumption.
IS42S16800F-7TL by Integrated Silicon Solution

IS42S16800F-7TL

Integrated Silicon Solution

IS42S16800F-7TL by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 143 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT42L256M32D4KP-25IT:A by Micron Technology

MT42L256M32D4KP-25IT:A

Micron Technology

Micron Technology's MT42L256M32D4KP-25IT:A is a LPDDR2 DRAM with 256MX32 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
MT48LC4M32B2P-7:GTR by Micron Technology

MT48LC4M32B2P-7:GTR

Micron Technology

Micron Technology's MT48LC4M32B2P-7:GTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70 °C. It features Self Refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for commercial applications requiring high memory density and synchronous operation.
MT46H64M16LFBF-5IT:B by Micron Technology

MT46H64M16LFBF-5IT:B

Micron Technology

Micron Technology's MT46H64M16LFBF-5IT:B is a DDR1 DRAM with 64MX16 organization, operating at 200 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring fast memory access and low power consumption.
AS4C128M16D3LC-12BINTR by Alliance Memory

AS4C128M16D3LC-12BINTR

Alliance Memory

Alliance Memory's AS4C128M16D3LC-12BINTR is a 128MX16 DDR3L DRAM with 800 MHz clock frequency. It operates at 1.35V, has 96 terminals in a grid array package style, and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing.
W631GU6NB-12 by Winbond Electronics

W631GU6NB-12

Winbond Electronics

W631GU6NB-12 by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at up to 800 MHz. It features a low supply voltage of 1.35V and offers a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
M378B5673FH0-CH9 by Samsung

M378B5673FH0-CH9

Samsung

Samsung M378B5673FH0-CH9 DDR DRAM MODULE features 256MX64 organization, operates at 667 MHz clock frequency, and has a memory width of 64. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT46H32M32LFB5-6IT:B by Micron Technology

MT46H32M32LFB5-6IT:B

Micron Technology

Micron Technology's MT46H32M32LFB5-6IT:B is a DDR1 DRAM with 32MX32 organization, operating at 166 MHz. It features a 90-terminal grid array package suitable for industrial applications. With synchronous operation and self-refresh capability, it offers fast access time of 5 ns and supports sequential burst lengths of 2,4,8,16.
MT41K256M16TW-107:P/TR by Micron Technology

MT41K256M16TW-107:P/TR

Micron Technology

Micron Technology's MT41K256M16TW-107:P/TR is a DDR3L DRAM with 256MX16 organization, operating at 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.