Micron Technology - EDE2104AASE-6E-E

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EDE2104AASE-6E-E by Micron Technology

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Manufacturer Micron Technology
Manufacturer's Part Number EDE2104AASE-6E-E
Description DDR2 DRAM; No. of Terminals: 68; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8; Operating Mode: SYNCHRONOUS;
Datasheet EDE2104AASE-6E-E Datasheet
In Stock1,407
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 512MX4
Maximum Seated Height: 1.12 mm
Access Mode: MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.7 V
Surface Mount: YES
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 68
No. of Words: 536870912 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B68
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Package Code: TFBGA
Width: 10.2 mm
No. of Ports: 1
Memory Density: 2147483648 bit
Self Refresh: YES
Memory IC Type: DDR2 DRAM
JESD-609 Code: e1
Memory Width: 4
No. of Functions: 1
Qualification: Not Qualified
Length: 20.7 mm
No. of Words Code: 512M
Nominal Supply Voltage / Vsup (V): 1.8
Additional Features: AUTO/SELF REFRESH
Terminal Pitch: .8 mm
Maximum Supply Voltage (Vsup): 1.9 V
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Pricing (USD)

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