EDF8164A1MA-GD-F by Micron Technology | Memory ICs

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Manufacturer	Micron Technology
Manufacturer's Part Number	EDF8164A1MA-GD-F
Description	DDR3 DRAM; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Access Mode: MULTI BANK PAGE BURST; Surface Mount: YES;
Datasheet	EDF8164A1MA-GD-F Datasheet
In Stock	338

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	128MX64
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Seated Height:	.9 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.14 V
Surface Mount:	YES
No. of Terminals:	253
No. of Words:	134217728 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	S-PBGA-B253
Package Shape:	SQUARE
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Package Code:	VFBGA
Width:	12.5 mm
No. of Ports:	1
Memory Density:	8589934592 bit
Self Refresh:	YES
Memory IC Type:	DDR3 DRAM
Memory Width:	64
No. of Functions:	1
Length:	12.5 mm
No. of Words Code:	128M
Nominal Supply Voltage / Vsup (V):	1.2
Additional Features:	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
Peak Reflow Temperature (C):	NOT SPECIFIED
Terminal Pitch:	.5 mm
Maximum Supply Voltage (Vsup):	1.3 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
338	-	-

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RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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