Micron Technology - EDW2032BBBG-40-F

  1. Home
  2. Micron Technology - EDW2032BBBG-40-F
EDW2032BBBG-40-F by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number EDW2032BBBG-40-F
Description DDR5 DRAM; No. of Terminals: 170; Package Code: TFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS; No. of Words: 67108864 words;
Datasheet EDW2032BBBG-40-F Datasheet
In Stock1,833
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 64MX32
Maximum Seated Height: 1.2 mm
Access Mode: MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.455 V
Surface Mount: YES
Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
No. of Terminals: 170
No. of Words: 67108864 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B170
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Package Code: TFBGA
Width: 12 mm
No. of Ports: 1
Memory Density: 2147483648 bit
Self Refresh: YES
Memory IC Type: DDR5 DRAM
JESD-609 Code: e1
Memory Width: 32
No. of Functions: 1
Length: 14 mm
No. of Words Code: 64M
Nominal Supply Voltage / Vsup (V): 1.5
Additional Features: AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V
Terminal Pitch: .8 mm
Maximum Supply Voltage (Vsup): 1.545 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,833 - -

Popular Products

Category Top Products

MT41K512M16VRN-107AIT:PTR by Micron Technology

MT41K512M16VRN-107AIT:PTR

Micron Technology

Micron Technology's MT41K512M16VRN-107AIT:PTR is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and low power consumption.
MT46H64M16LFBF-5AIT:B by Micron Technology

MT46H64M16LFBF-5AIT:B

Micron Technology

Micron Technology's MT46H64M16LFBF-5AIT:B is a 64MX16 DDR1 DRAM with 67108864 words. It operates at 200 MHz, has a memory density of 1073741824 bit, and supports a max clock frequency of 200 MHz. Ideal for industrial applications requiring fast data access and high memory capacity.
MT40A2G8NRE-083E:B by Micron Technology

MT40A2G8NRE-083E:B

Micron Technology

Micron Technology's MT40A2G8NRE-083E:B is a DDR4 DRAM with 2GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. This thin profile memory module is ideal for applications requiring high-speed data processing in compact electronic devices.
W3H32M64E-533SBI by White Electronic Designs

W3H32M64E-533SBI

White Electronic Designs

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;
MT8HTF12864HDZ-800M1 by Micron Technology

MT8HTF12864HDZ-800M1

Micron Technology

Micron Technology's MT8HTF12864HDZ-800M1 is a 128MX64 DDR DRAM MODULE with 8589934592 bit memory density. It operates synchronously at 1.8V, featuring dual bank page burst access mode. Ideal for commercial applications, this rectangular microelectronic assembly has a max temperature of 70°C.
KM424C64Z-10 by Samsung

KM424C64Z-10

Samsung

Samsung's KM424C64Z-10 DRAM features 64KX4 organization, 3-STATE output, and FAST PAGE access mode. Ideal for video applications with 65536 words memory capacity, 100 ns access time, and 262144 bit density. Operates at temperatures b/w 0 to 70 °C.
MT47H64M16NF-25EAAT:M by Micron Technology

MT47H64M16NF-25EAAT:M

Micron Technology

Micron Technology's MT47H64M16NF-25EAAT:M is a DDR2 DRAM with 64MX16 organization, operating at a max clock frequency of 400 MHz. It has a memory density of 1,073,741,824 bits and is commonly used in applications requiring high-speed synchronous memory.
MT40A512M16LY-062E:E by Micron Technology

MT40A512M16LY-062E:E

Micron Technology

Micron Technology's MT40A512M16LY-062E:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in various electronic devices.
S27KL0642GABHI020 by Infineon Technologies

S27KL0642GABHI020

Infineon Technologies

Infineon's S27KL0642GABHI020 DRAM features 8MX8 organization, 200 MHz clock frequency, and 67108864 bit memory density. Ideal for applications requiring high-speed synchronous operation with common I/O type and self-refresh capability. Package style is grid array with very thin profile, suitable for compact designs in various electronic devices.
S27KS0642GABHI030 by Infineon Technologies

S27KS0642GABHI030

Infineon Technologies

Infineon's S27KS0642GABHI030 is a 8MX8 DRAM with 67108864 bit memory density. Operating at 200 MHz, it features synchronous mode and self-refresh capability. Ideal for applications requiring fast data access and low power consumption in compact devices.
S27KL0642DPBHI030 by Cypress Semiconductor

S27KL0642DPBHI030

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Maximum Supply Voltage (Vsup): 3.6 V;
M471A1K43DB1-CTD by Samsung

M471A1K43DB1-CTD

Samsung

Samsung M471A1K43DB1-CTD DDR4 DRAM Module operates at 1333 MHz with 1.2V, offering 1073741824 words memory density and 64-bit width. Ideal for high-performance computing applications due to its synchronous operation and single bank page burst access mode.
W66CP2NQUAGJ by Winbond Electronics

W66CP2NQUAGJ

Winbond Electronics

Winbond Electronics LPDDR4 DRAM W66CP2NQUAGJ features 128MX32 organization, operates at up to 1869.1 MHz clock frequency, and has a memory density of 4294967296 bit. Ideal for applications requiring high-speed synchronous operation in compact devices like smartphones and tablets.
IS42S16800F-7TL by Integrated Silicon Solution

IS42S16800F-7TL

Integrated Silicon Solution

IS42S16800F-7TL by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 143 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT53D1024M32D4DT-046AIT:D by Micron Technology

MT53D1024M32D4DT-046AIT:D

Micron Technology

Micron Technology's MT53D1024M32D4DT-046AIT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.
M378T5263AZ3-CF7 by Samsung

M378T5263AZ3-CF7

Samsung

Samsung M378T5263AZ3-CF7 DDR DRAM Module features 512MX64 organization, operates at 400 MHz with 1.8V supply voltage. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT41K1G8TRF-125IT:E by Micron Technology

MT41K1G8TRF-125IT:E

Micron Technology

Micron Technology's MT41K1G8TRF-125IT:E is a DDR3L DRAM with 1GX8 organization, operating at 800 MHz. It features a thin profile grid array package and operates at 1.35V, suitable for applications requiring high-speed synchronous memory with low power consumption.
MT48LC16M16A2P-6AAIT:G by Micron Technology

MT48LC16M16A2P-6AAIT:G

Micron Technology

Micron Technology's MT48LC16M16A2P-6AAIT:G is a 16MX16 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access times and high memory density in a compact small outline package.
K4T1G164QF-BCE6 by Samsung

K4T1G164QF-BCE6

Samsung

Samsung's K4T1G164QF-BCE6 is a 64MX16 DDR2 DRAM with 333 MHz clock frequency. Featuring 67108864 words, it has a memory density of 1073741824 bit and operates at 1.8V. Ideal for applications requiring high-speed data processing and storage in electronic devices.
K4T51163QG-HCE6 by Samsung

K4T51163QG-HCE6

Samsung

Samsung's K4T51163QG-HCE6 DDR2 DRAM features 32MX16 organization, 333 MHz clock frequency, and 1.8V supply voltage. Ideal for high-performance applications requiring fast data processing and storage with a memory density of 536870912 bits.