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| Manufacturer | Micron Technology |
|---|---|
| Manufacturer's Part Number | EDX5116ACSE-2A-E |
| Description | RAMBUS DRAM; Temperature Grade: OTHER; No. of Terminals: 104; Package Code: BGA; Refresh Cycles: 32768; Package Shape: RECTANGULAR; |
| Datasheet | EDX5116ACSE-2A-E Datasheet |
| In Stock | 2,103 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Organization: | 32MX16 |
| Output Characteristics: | 3-STATE |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| No. of Terminals: | 104 |
| No. of Words: | 33554432 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B104 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Maximum Operating Temperature: | 100 Cel |
| Package Code: | BGA |
| Input/Output Type: | COMMON |
| Memory Density: | 536870912 bit |
| Memory IC Type: | RAMBUS DRAM |
| Minimum Operating Temperature: | 0 Cel |
| Memory Width: | 16 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | BGA104,11X16,50/32 |
| Refresh Cycles: | 32768 |
| Maximum Access Time: | .065 ns |
| No. of Words Code: | 32M |
| Nominal Supply Voltage / Vsup (V): | 1.8 |
| Terminal Pitch: | .8 mm |
| Temperature Grade: | OTHER |
| Power Supplies (V): | 1.8 |









