Micron Technology - MT18KBZS1G72PKIZ-1G6XX

  1. Home
  2. Micron Technology - MT18KBZS1G72PKIZ-1G6XX
MT18KBZS1G72PKIZ-1G6XX by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT18KBZS1G72PKIZ-1G6XX
Description DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 244; Package Code: DIMM; Package Shape: RECTANGULAR; Self Refresh: YES;
Datasheet MT18KBZS1G72PKIZ-1G6XX Datasheet
In Stock1,904
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Organization: 1GX72
Maximum Seated Height: 17.91 mm
Access Mode: MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.283 V
Surface Mount: NO
No. of Terminals: 244
No. of Words: 1073741824 words
Terminal Position: DUAL
Package Style (Meter): MICROELECTRONIC ASSEMBLY
Technology: CMOS
JESD-30 Code: R-XDMA-N244
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: DIMM
Width: 3.8 mm
No. of Ports: 1
Memory Density: 77309411328 bit
Self Refresh: YES
Memory IC Type: DDR DRAM MODULE
Minimum Operating Temperature: -40 Cel
Memory Width: 72
No. of Functions: 1
Length: 82 mm
No. of Words Code: 1G
Nominal Supply Voltage / Vsup (V): 1.35
Additional Features: AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
Temperature Grade: INDUSTRIAL
Maximum Supply Voltage (Vsup): 1.45 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,904 - -

Popular Products

Category Top Products

W631GU6NB09I by Winbond Electronics

W631GU6NB09I

Winbond Electronics

Winbond Electronics' W631GU6NB09I is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. Featuring synchronous mode and self-refresh capability, it has a memory density of 1073741824 bit. Ideal for industrial applications requiring high-speed data processing in compact devices.
K4B1G1646G-BCMA by Samsung

K4B1G1646G-BCMA

Samsung

Samsung's K4B1G1646G-BCMA DDR3 DRAM features 64MX16 organization, 933 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max standby current of 0.01 Amp.
W989D6DBGX6E by Winbond Electronics

W989D6DBGX6E

Winbond Electronics

W989D6DBGX6E by Winbond Electronics is a 32MX16 SDRAM with 536MB memory density. Operating at 1.8V, it offers synchronous self-refresh mode and fast access time of 5ns. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.
IS42S16160J-7BL by Integrated Silicon Solution

IS42S16160J-7BL

Integrated Silicon Solution

IS42S16160J-7BL by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a peak reflow temp of 260°C, and offers fast access time of 5.4ns. Ideal for commercial applications requiring high-speed memory in compact form factors.
MT41K64M16TW-107AUT:J by Micron Technology

MT41K64M16TW-107AUT:J

Micron Technology

DDR3L DRAM; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e1; Terminal Finish: TIN SILVER COPPER;
MT46V16M16P-5B:MTR by Micron Technology

MT46V16M16P-5B:MTR

Micron Technology

Micron Technology's MT46V16M16P-5B:MTR is a DDR1 DRAM with 16MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and a memory density of 268MB. Ideal for applications requiring fast access times and high memory capacity in commercial temperature environments.
S27KS0642GABHV020 by Cypress Semiconductor

S27KS0642GABHV020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Width: 6 mm; Minimum Operating Temperature: -40 Cel;
S27KL0642GABHA023 by Infineon Technologies

S27KL0642GABHA023

Infineon Technologies

Infineon's S27KL0642GABHA023 DRAM features 8MX8 organization, operates synchronously at up to 200 MHz, and has a memory density of 67108864 bits. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type.
AS4C256M16D3A-12BIN by Alliance Memory

AS4C256M16D3A-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3A-12BIN is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliability in a compact grid array package.
IS42S32400F-7TL by Integrated Silicon Solution

IS42S32400F-7TL

Integrated Silicon Solution

IS42S32400F-7TL by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, operating at 143MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
IS42S32400F-7TLI by Integrated Silicon Solution

IS42S32400F-7TLI

Integrated Silicon Solution

IS42S32400F-7TLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. Ideal for industrial applications, it features common I/O type, self-refresh mode, and supports four-bank page burst access mode.
MT46V32M16P-6T:F by Micron Technology

MT46V32M16P-6T:F

Micron Technology

Micron Technology's MT46V32M16P-6T:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
M393B2G70BH0-YH9 by Samsung

M393B2G70BH0-YH9

Samsung

Samsung's M393B2G70BH0-YH9 DRAM features 240 terminals, 1.35V supply voltage, and a max clock frequency of 667MHz. Ideal for high-performance computing applications requiring fast memory access and data processing capabilities.
M378T2863RZS-CE6 by Samsung

M378T2863RZS-CE6

Samsung

Samsung M378T2863RZS-CE6 DDR DRAM Module features 128MX8 organization, operates at 333 MHz clock frequency, and has a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous operation with a common I/O type and self-refresh capability.
MT48LC4M32B2P-7:G by Micron Technology

MT48LC4M32B2P-7:G

Micron Technology

Micron Technology's MT48LC4M32B2P-7:G is a 3.3V Synchronous DRAM with 4MX32 organization, suitable for commercial applications. It features a max clock frequency of 143 MHz, operates at temperatures b/w 0 to 70 °C, and has a memory density of 134217728 bits.
AS4C512M8D4-75BCN by Alliance Memory

AS4C512M8D4-75BCN

Alliance Memory

Alliance Memory's AS4C512M8D4-75BCN is a 512MX8 DDR4 DRAM with 1333 MHz clock frequency, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in compact electronic devices.
MT53D1024M32D4DT-046AAT:D by Micron Technology

MT53D1024M32D4DT-046AAT:D

Micron Technology

Micron Technology's MT53D1024M32D4DT-046AAT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or mobile devices.
MT47H32M16NF-25EIT:HTR by Micron Technology

MT47H32M16NF-25EIT:HTR

Micron Technology

Micron Technology's MT47H32M16NF-25EIT:HTR is a DDR2 DRAM with 32MX16 organization and 33554432 words. It operates synchronously at a voltage of 1.8V, has a temperature range of -40 to 85°C, and is suitable for industrial applications.
M378B5673FH0-CH9 by Samsung

M378B5673FH0-CH9

Samsung

Samsung M378B5673FH0-CH9 DDR DRAM MODULE features 256MX64 organization, operates at 667 MHz clock frequency, and has a memory width of 64. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT53E256M32D2FW-046AAT:B by Micron Technology

MT53E256M32D2FW-046AAT:B

Micron Technology

Micron Technology's MT53E256M32D2FW-046AAT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial devices.