Micron Technology - MT18KDF51272PDZ-1G4P1

  1. Home
  2. Micron Technology - MT18KDF51272PDZ-1G4P1
MT18KDF51272PDZ-1G4P1 by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT18KDF51272PDZ-1G4P1
Description DDR3L DRAM MODULE;
Datasheet MT18KDF51272PDZ-1G4P1 Datasheet
In Stock184
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
184 - -

Popular Products

Category Top Products

MT53E256M32D2DS-046IT:B by Micron Technology

MT53E256M32D2DS-046IT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-046IT:B is a 256MX32 LPDDR4 DRAM with a clock frequency of 2133 MHz. It operates in an industrial temperature range and has a very thin profile package style. This memory module is commonly used in applications that require high-speed data processing and reliable performance.
MT46H256M32L4LE-48WT:C by Micron Technology

MT46H256M32L4LE-48WT:C

Micron Technology

Micron Technology's MT46H256M32L4LE-48WT:C is a 256MX32 LPDDR1 DRAM with 32-bit memory width. It operates synchronously at 1.8V, featuring self-refresh and four-bank page burst access mode. Suitable for applications requiring high memory density, fast access time of 5ns, and operating temperatures b/w -25 to 85°C.
K4H641638Q-LCCC by Samsung

K4H641638Q-LCCC

Samsung

Samsung's K4H641638Q-LCCC DRAM features 4MX16 organization, 400 MHz clock frequency, and 67108864 bit memory density. Ideal for cache applications with a max operating temperature of 70°C.
NT6DM32M16BD-T1I by Nanya Technology

NT6DM32M16BD-T1I

Nanya Technology

NT6DM32M16BD-T1I by Nanya Technology is a DDR1 DRAM with 32MX16 organization, 536870912 bit memory density, and operates at 1.8V. Suitable for industrial applications, it features synchronous operation, self-refresh capability, and a very thin profile grid array package style.
K4S511632B-UC75 by Samsung

K4S511632B-UC75

Samsung

Samsung's K4S511632B-UC75 is a 32MX16 DRAM with 3.3V supply, 133MHz clock frequency, and 70°C operating temp. Ideal for applications requiring high-speed memory access in commercial-grade devices.
AS4C512M16D4-75BCN by Alliance Memory

AS4C512M16D4-75BCN

Alliance Memory

Alliance Memory's AS4C512M16D4-75BCN is a 512MX16 DDR4 DRAM with 1333 MHz clock frequency, 1.2V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
IS42S16800F-6TLI-TR by Integrated Silicon Solution

IS42S16800F-6TLI-TR

Integrated Silicon Solution

IS42S16800F-6TLI-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 3.3V supply, 166 MHz clock frequency, and -40 to 85 °C operating temp. Ideal for industrial applications requiring high-speed memory access in a small outline package.
IS43R16320D-6BL by Integrated Silicon Solution

IS43R16320D-6BL

Integrated Silicon Solution

IS43R16320D-6BL by Integrated Silicon Solution is a 32MX16 DDR1 DRAM with a max clock frequency of 166 MHz. It operates synchronously and has a memory density of 536870912 bit. It is commonly used in applications requiring high-speed data storage and retrieval.
EDB4432BBBJ-1DAIT-F-R by Micron Technology

EDB4432BBBJ-1DAIT-F-R

Micron Technology

Micron Technology's EDB4432BBBJ-1DAIT-F-R is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for industrial applications requiring high memory density and low power consumption.
MT40A512M16TB-062E:R by Micron Technology

MT40A512M16TB-062E:R

Micron Technology

Micron Technology's MT40A512M16TB-062E:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as computers and servers.
IS42S16320F-7TLI by Integrated Silicon Solution

IS42S16320F-7TLI

Integrated Silicon Solution

IS42S16320F-7TLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features self-refresh mode and common I/O type, suitable for industrial applications requiring fast access times and high memory density.
MT41K128M16JT-125IT:KTR by Micron Technology

MT41K128M16JT-125IT:KTR

Micron Technology

Micron Technology's MT41K128M16JT-125IT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and multi-bank page burst access mode.
MT48LC16M16A2B4-6AAIT:G by Micron Technology

MT48LC16M16A2B4-6AAIT:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-6AAIT:G is a 16MX16 DRAM with 3.3V supply voltage, operating in synchronous mode. It features a grid array package style, very thin profile, and fine pitch terminals. Ideal for industrial applications requiring fast access time and high memory density.
MT48LC8M16A2TG-7EIT:G by Micron Technology

MT48LC8M16A2TG-7EIT:G

Micron Technology

Micron Technology's MT48LC8M16A2TG-7EIT:G is a 3.3V, 8MX16 Synchronous DRAM with 143 MHz clock frequency and -40 to 85°C operating range. It features 4-bank page burst access mode, ideal for industrial applications requiring high-speed memory performance.
S27KL0642DPBHB023 by Cypress Semiconductor

S27KL0642DPBHB023

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Ports: 1; Terminal Position: BOTTOM;
MT48LC16M16A2P-6A by Micron Technology

MT48LC16M16A2P-6A

Micron Technology

MT48LC16M16A2P-6A by Micron Technology is a 16MX16 DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is used in commercial applications requiring synchronous memory ICs with a memory density of 268435456 bits.
IS42S16160G-7BLI-TR by Integrated Silicon Solution

IS42S16160G-7BLI-TR

Integrated Silicon Solution

IS42S16160G-7BLI-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for industrial applications, it features a thin profile grid array package and supports common I/O type with self-refresh capability.
NT5TU64M16DG-3CI by Nanya Technology

NT5TU64M16DG-3CI

Nanya Technology

NT5TU64M16DG-3CI by Nanya Technology is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for industrial applications requiring high memory density and fast access times.
MT41K128M16JT-125:K by Micron Technology

MT41K128M16JT-125:K

Micron Technology

MT41K128M16JT-125:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and consumes 195 mA max supply current. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K512M16VRP-107AAT:P by Micron Technology

MT41K512M16VRP-107AAT:P

Micron Technology

Micron Technology's MT41K512M16VRP-107AAT:P is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type.