MT29F4G08ABADAH4-IT:D by Micron Technology | Memory ICs

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Manufacturer	Micron Technology
Manufacturer's Part Number	MT29F4G08ABADAH4-IT:D
Description	FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Ready or Busy: YES;
Datasheet	MT29F4G08ABADAH4-IT:D Datasheet
In Stock	16,363

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.0001 Amp
Organization:	512MX8
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	1 mm
Minimum Supply Voltage (Vsup):	2.7 V
Sub-Category:	Flash Memories
Surface Mount:	YES
Maximum Supply Current:	35 mA
Command User Interface:	YES
No. of Terminals:	63
No. of Words:	536870912 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B63
No. of Sectors/Size:	4K
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	VFBGA
Width:	9 mm
Memory Density:	4294967296 bit
Sector Size (Words):	128K
Toggle Bit:	NO
Memory IC Type:	FLASH
Minimum Operating Temperature:	-40 Cel
Memory Width:	8
Page Size (words):	2K
No. of Functions:	1
Type:	SLC NAND TYPE
Qualification:	Not Qualified
Package Equivalence Code:	BGA63,10X12,32
Length:	11 mm
Maximum Access Time:	25 ns
No. of Words Code:	512M
Nominal Supply Voltage / Vsup (V):	3.3
Ready or Busy:	YES
Peak Reflow Temperature (C):	260
Parallel or Serial:	PARALLEL
Terminal Pitch:	.8 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	3.6 V
Data Polling:	NO
Power Supplies (V):	3/3.3

Pricing (USD)

Qty.	Unit Price	Ext. Price
16,363	-	-

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TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;