Micron Technology - MT40A1G16RC-062EIT:BTR

  1. Home
  2. Micron Technology - MT40A1G16RC-062EIT:BTR
MT40A1G16RC-062EIT:BTR by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT40A1G16RC-062EIT:BTR
Description DDR4 DRAM; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260; JESD-609 Code: e1;
Datasheet MT40A1G16RC-062EIT:BTR Datasheet
In Stock187,645
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Peak Reflow Temperature (C): 260
Memory IC Type: DDR4 DRAM
Terminal Finish: TIN SILVER COPPER
JESD-609 Code: e1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
187,645 - -

Popular Products

Category Top Products

MT8JTF12864HZ-1G6G1 by Micron Technology

MT8JTF12864HZ-1G6G1

Micron Technology

Micron Technology's MT8JTF12864HZ-1G6G1 is a 128MX64 DDR DRAM MODULE with 204 terminals, operating at 800 MHz. It has a memory density of 8589934592 bits and supports a max clock frequency of 800 MHz. Ideal for commercial applications requiring high-speed data processing and storage capabilities.
IS42S16160J-6BLI-TR by Integrated Silicon Solution

IS42S16160J-6BLI-TR

Integrated Silicon Solution

IS42S16160J-6BLI-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has a memory density of 268Mbit, and supports common I/O type. Ideal for industrial applications requiring fast access times and high memory density in compact form factors.
MT40A512M16LY-062EAAT:E by Micron Technology

MT40A512M16LY-062EAAT:E

Micron Technology

Micron Technology's MT40A512M16LY-062EAAT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 105 °C, and has a max supply voltage of 1.26 V. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT48LC4M16A2P-75:GTR by Micron Technology

MT48LC4M16A2P-75:GTR

Micron Technology

Micron Technology's MT48LC4M16A2P-75:GTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at 70°C max temp. It features self-refresh mode, small outline package, and dual terminal position. Ideal for commercial applications requiring fast access time and high memory density.
MT41J128M16JT-125AAT:K by Micron Technology

MT41J128M16JT-125AAT:K

Micron Technology

Micron Technology's MT41J128M16JT-125AAT:K is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and multi-bank page burst access mode.
IS42S16100H-7TLI by Integrated Silicon Solution

IS42S16100H-7TLI

Integrated Silicon Solution

IS42S16100H-7TLI by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at up to 143 MHz clock frequency. Ideal for industrial applications, it features dual bank page burst access mode and offers a memory density of 16Mbit in a small outline package.
MT40A512M16JY-083EAAT:BTR by Micron Technology

MT40A512M16JY-083EAAT:BTR

Micron Technology

MT40A512M16JY-083EAAT:BTR by Micron Technology is a DDR4 DRAM with 512MX16 organization, operating at a max clock frequency of 1200.4 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).
IS42S32400F-6TL-TR by Integrated Silicon Solution

IS42S32400F-6TL-TR

Integrated Silicon Solution

IS42S32400F-6TL-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX32 organization, operating at 166 MHz. It features a small outline package and is suitable for applications requiring high-speed memory access in commercial temperature environments.
S70KL1282DPBHI020 by Infineon Technologies

S70KL1282DPBHI020

Infineon Technologies

Infineon's S70KL1282DPBHI020 is a 16MX8 DRAM with 166 MHz clock frequency, operating at 3.6V. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices due to its very thin profile grid array package style.
S27KL0642GABHI020 by Cypress Semiconductor

S27KL0642GABHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00025 Amp; No. of Functions: 1;
MT41J128M16JT-093:K by Micron Technology

MT41J128M16JT-093:K

Micron Technology

Micron Technology's MT41J128M16JT-093:K is a DDR3 DRAM with 128MX16 organization, operating at 1066 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
MT47H128M8JN-3IT:H by Micron Technology

MT47H128M8JN-3IT:H

Micron Technology

MT47H128M8JN-3IT:H by Micron Technology is a DDR2 DRAM with 128MX8 organization and 1.8V nominal voltage. It operates synchronously at a max clock frequency of 333 MHz and is commonly used in industrial applications requiring high memory density and fast access times.
S27KS0642GABHB020 by Cypress Semiconductor

S27KS0642GABHB020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Technology: CMOS; Terminal Pitch: 1 mm;
IS42S16320F-7TL by Integrated Silicon Solution

IS42S16320F-7TL

Integrated Silicon Solution

IS42S16320F-7TL by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 143 MHz clock frequency. It operates at 3.3V, has 54 terminals, and supports common I/O type. Ideal for applications requiring fast memory access in commercial temperature environments.
IS42S83200G-7BLI-TR by Integrated Silicon Solution

IS42S83200G-7BLI-TR

Integrated Silicon Solution

IS42S83200G-7BLI-TR by Integrated Silicon Solution is a 32MX8 Synchronous DRAM with 3.3V supply, 85°C max temp, and 143 MHz clock frequency. Ideal for industrial applications requiring high memory density and fast access times.
MT53E1G32D2FW-046AUT:A by Micron Technology

MT53E1G32D2FW-046AUT:A

Micron Technology

LPDDR4 DRAM;
IS42S16320F-7BLI by Integrated Silicon Solution

IS42S16320F-7BLI

Integrated Silicon Solution

IS42S16320F-7BLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with a max clock frequency of 143 MHz. It is commonly used in industrial applications and operates at a temperature range of -40 to 85 °C.
S27KS0642GABHI020 by Cypress Semiconductor

S27KS0642GABHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Functions: 1; Package Equivalence Code: BGA24,5X5,40;
MT48LC32M16A2P-75IT:C by Micron Technology

MT48LC32M16A2P-75IT:C

Micron Technology

MT48LC32M16A2P-75IT:C by Micron Technology is a 32MX16 DRAM with 3.3V supply, operating at 133MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density in a small outline package.
K4T51163QG-HCE6 by Samsung

K4T51163QG-HCE6

Samsung

Samsung's K4T51163QG-HCE6 DDR2 DRAM features 32MX16 organization, 333 MHz clock frequency, and 1.8V supply voltage. Ideal for high-performance applications requiring fast data processing and storage with a memory density of 536870912 bits.