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Manufacturer | Micron Technology |
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Manufacturer's Part Number | MT40A512M8RH-075EAUT:F |
Description | DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .045 Amp; |
Datasheet | MT40A512M8RH-075EAUT:F Datasheet |
In Stock | 517 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Standby Current: | .045 Amp |
Organization: | 512MX8 |
Output Characteristics: | 3-STATE |
Maximum Seated Height: | 1.2 mm |
Access Mode: | MULTI BANK PAGE BURST |
Minimum Supply Voltage (Vsup): | 1.14 V |
Surface Mount: | YES |
Maximum Supply Current: | 49 mA |
No. of Terminals: | 78 |
Maximum Clock Frequency (fCLK): | 1333 MHz |
No. of Words: | 536870912 words |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY, THIN PROFILE, FINE PITCH |
Screening Level: | AEC-Q100 |
Technology: | CMOS |
JESD-30 Code: | R-PBGA-B78 |
Package Shape: | RECTANGULAR |
Terminal Form: | BALL |
Operating Mode: | SYNCHRONOUS |
Maximum Operating Temperature: | 125 Cel |
Package Code: | TFBGA |
Width: | 9 mm |
Input/Output Type: | COMMON |
No. of Ports: | 1 |
Memory Density: | 4294967296 bit |
Self Refresh: | YES |
Sequential Burst Length: | 8 |
Minimum Standby Voltage: | 1.14 V |
Memory IC Type: | DDR4 DRAM |
Minimum Operating Temperature: | -40 Cel |
Memory Width: | 8 |
No. of Functions: | 1 |
Package Equivalence Code: | BGA78,9X13,32 |
Interleaved Burst Length: | 8 |
Length: | 10.5 mm |
No. of Words Code: | 512M |
Nominal Supply Voltage / Vsup (V): | 1.2 |
Additional Features: | AUTO/SELF REFRESH |
Terminal Pitch: | .8 mm |
Temperature Grade: | AUTOMOTIVE |
Maximum Supply Voltage (Vsup): | 1.26 V |