Micron Technology - MT41J128M16JT-107:KTR

  1. Home
  2. Micron Technology - MT41J128M16JT-107:KTR
MT41J128M16JT-107:KTR by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT41J128M16JT-107:KTR
Description DDR3 DRAM; Terminal Finish: TIN SILVER COPPER;
Datasheet MT41J128M16JT-107:KTR Datasheet
In Stock964
NAME DESCRIPTION
Memory IC Type: DDR3 DRAM
Terminal Finish: TIN SILVER COPPER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
964 - -

Popular Products

Category Top Products

AS4C1G8MD3L-12BCN by Alliance Memory

AS4C1G8MD3L-12BCN

Alliance Memory

Alliance Memory's AS4C1G8MD3L-12BCN is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. Featuring synchronous operation and self-refresh capability, it offers 1073741824 words of memory with a width of 8 bits. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.
MT48LC16M16A2P-6AIT:GTR by Micron Technology

MT48LC16M16A2P-6AIT:GTR

Micron Technology

Micron Technology's MT48LC16M16A2P-6AIT:GTR is a 16MX16 DRAM with 16777216 words and 268435456 bit memory density. It operates at 3.3V, has a peak reflow temperature of 260°C, and supports industrial temperature grade applications. With synchronous operation and four bank page burst access mode, it is ideal for high-performance computing systems.
D2164A-20 by Intel

D2164A-20

Intel

Intel's D2164A-20 is a 64KX1 PAGE MODE DRAM with 65536 bit memory density. Operating at 5V, it offers 128 refresh cycles and has a max access time of 200ns. Ideal for commercial applications requiring high-speed memory solutions.
MT47H128M16RT-25EAIT:C by Micron Technology

MT47H128M16RT-25EAIT:C

Micron Technology

Micron Technology's MT47H128M16RT-25EAIT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage and offers multi-bank page burst access mode. This industrial-grade memory IC has a thin profile grid array package suitable for various applications requiring high-speed synchronous operation.
MT41K128M16JT-125XIT:K by Micron Technology

MT41K128M16JT-125XIT:K

Micron Technology

Micron Technology's MT41K128M16JT-125XIT:K is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high memory density and multi-bank page burst access mode in thin profile packages.
KM416C256BJ-7 by Samsung

KM416C256BJ-7

Samsung

Samsung's KM416C256BJ-7 is a 256Kx16 DRAM with 70ns access time and 512 refresh cycles. It operates at 5V, has a small outline package style, and is ideal for fast page access applications in commercial temperature environments.
MT46H32M16LFBF-6AT:C by Micron Technology

MT46H32M16LFBF-6AT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6AT:C is a DDR1 DRAM with 32MX16 organization, 33554432 words, and 536870912 bit memory density. Operating at 105 °C max temp, it suits industrial applications requiring fast access times of 5 ns. With synchronous operation and self-refresh capability, this DRAM offers reliable performance in various electronic systems.
S27KL0642DPBHI023 by Cypress Semiconductor

S27KL0642DPBHI023

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; Maximum Access Time: 35 ns;
MT48LC2M32B2P-6AIT:JTR by Micron Technology

MT48LC2M32B2P-6AIT:JTR

Micron Technology

Micron Technology's MT48LC2M32B2P-6AIT:JTR is a 3.3V, 2MX32 Synchronous DRAM with 5.4ns access time. Ideal for industrial applications, it features self-refresh mode and operates at temperatures ranging from -40 to 85°C. The memory density is 67108864 bits with a memory width of 32 bits.
W9825G6KH-6 by Winbond Electronics

W9825G6KH-6

Winbond Electronics

W9825G6KH-6 by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5 ns max access time. It operates at 3.3V and is suitable for commercial applications requiring high-speed synchronous memory solutions.
KM44C256AP-8 by Samsung

KM44C256AP-8

Samsung

Samsung's KM44C256AP-8 is a 256Kx4 DRAM with 80ns access time, operating at 5V. It features fast page access mode and 512 refresh cycles, suitable for commercial temperature grade applications. With a memory density of 1048576 bits, it offers common I/O type and through-hole terminal form.
EDW4032BABG-70-F-D by Micron Technology

EDW4032BABG-70-F-D

Micron Technology

Micron Technology's EDW4032BABG-70-F-D is a 128MX32 DRAM with 1.35V supply, synchronous operation, and self-refresh capability. It features a grid array package style suitable for applications requiring high memory density and multi-bank page burst access mode in thin profile designs.
M378B5673FH0-CH9 by Samsung

M378B5673FH0-CH9

Samsung

Samsung M378B5673FH0-CH9 DDR DRAM MODULE features 256MX64 organization, operates at 667 MHz clock frequency, and has a memory width of 64. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT48LC8M16A2TG-75IT:GTR by Micron Technology

MT48LC8M16A2TG-75IT:GTR

Micron Technology

Micron Technology's MT48LC8M16A2TG-75IT:GTR is a 3.3V, 8MX16 Synchronous DRAM with 8388608 words and 134217728 bit memory density. Operating in industrial temperature range, it features self-refresh capability and offers fast access time of 5.4 ns. Ideal for applications requiring high-speed data processing and reliable memory performance.
KVR1333D3S9/4G by Kingston Technology Company

KVR1333D3S9/4G

Kingston Technology Company

DRAMs;
M366S3253ETS-C7A by Samsung

M366S3253ETS-C7A

Samsung

Samsung M366S3253ETS-C7A is a 32MX64 Synchronous DRAM with 3.3V supply, operating at 133MHz. Ideal for commercial applications, it offers self-refresh capability and a memory density of 2GB, featuring a max access time of 5.4ns for high-speed data processing.
MT41K1G8RKB-107:PTR by Micron Technology

MT41K1G8RKB-107:PTR

Micron Technology

DDR3L DRAM; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER;
MT40A1G8WE-083EAAT:B by Micron Technology

MT40A1G8WE-083EAAT:B

Micron Technology

Micron Technology's MT40A1G8WE-083EAAT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type. With self-refresh capability and wide temperature range (-40°C to 105°C), it offers reliable performance in demanding environments.
MT48LC4M32B2B5-6AIT:L by Micron Technology

MT48LC4M32B2B5-6AIT:L

Micron Technology

Micron Technology's MT48LC4M32B2B5-6AIT:L is a 4MX32 SDRAM with 3.3V supply, operating at 166MHz clock frequency. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high-speed memory access in industrial environments.
MT48LC16M16A2TG-75IT:DTR by Micron Technology

MT48LC16M16A2TG-75IT:DTR

Micron Technology

Micron Technology's MT48LC16M16A2TG-75IT:DTR is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers 16777216 words memory density and supports synchronous operation with self-refresh capability.