MT41K256M16HA-125XIT:E by Micron Technology | Memory ICs

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Manufacturer	Micron Technology
Manufacturer's Part Number	MT41K256M16HA-125XIT:E
Description	DDR3L DRAM; No. of Terminals: 96; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 256MX16; Memory Density: 4294967296 bit;
Datasheet	MT41K256M16HA-125XIT:E Datasheet
In Stock	288

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	256MX16
Maximum Time At Peak Reflow Temperature (s):	30
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.283 V
Surface Mount:	YES
Terminal Finish:	Tin/Silver/Copper (Sn/Ag/Cu)
No. of Terminals:	96
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
Technology:	CMOS
JESD-30 Code:	R-PBGA-B96
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Package Code:	BGA
Other Names:	MT41K256M16HA-125XIT:E -MT41K256M16HA-125 XIT:E -MT41K256M16HA-125XIT:E MT41K256M16HA-125 XIT:E-ND 247659 -MT41K256M16HA-125 XIT:E-ND
No. of Ports:	1
Memory Density:	4294967296 bit
Self Refresh:	YES
Memory IC Type:	DDR3L DRAM
JESD-609 Code:	e1
Memory Width:	16
No. of Functions:	1
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.35
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	260
Maximum Supply Voltage (Vsup):	1.45 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
288	-	-

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.

FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;

The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;