Micron Technology - MT42L256M16D1GVMC-25WT:A

  1. Home
  2. Micron Technology - MT42L256M16D1GVMC-25WT:A
MT42L256M16D1GVMC-25WT:A by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT42L256M16D1GVMC-25WT:A
Description LPDDR2 DRAM;
Datasheet MT42L256M16D1GVMC-25WT:A Datasheet
In Stock472
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
472 - -

Popular Products

Category Top Products

MT41K128M16JT-125IT:K by Micron Technology

MT41K128M16JT-125IT:K

Micron Technology

MT41K128M16JT-125IT:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a max supply voltage of 1.45V and offers a memory density of 2147483648 bits. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capabilities.
K4S561632E-TC75 by Samsung

K4S561632E-TC75

Samsung

Samsung's K4S561632E-TC75 is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT53E512M32D1ZW-046AUT:B by Micron Technology

MT53E512M32D1ZW-046AUT:B

Micron Technology

MT53E512M32D1ZW-046AUT:B by Micron Technology is a 512MX32 LPDDR4 DRAM with a clock frequency of 2133 MHz. It operates synchronously, has a common input/output type, and is suitable for applications requiring high memory density and low power consumption.
IS42S16160J-7TLI by Integrated Silicon Solution

IS42S16160J-7TLI

Integrated Silicon Solution

IS42S16160J-7TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. Ideal for industrial applications requiring fast access time of 5.4 ns and self-refresh capability in a small outline package.
MT47H64M16HR-25EIT by Micron Technology

MT47H64M16HR-25EIT

Micron Technology

Micron Technology's MT47H64M16HR-25EIT is a DDR2 DRAM with 64MX16 organization, operating at 1.55V. It features synchronous operation, self-refresh capability, and a memory density of 1073741824 bits. Ideal for industrial applications requiring fast access times and multi-bank page burst access mode.
IS43QR16256B-075UBLI by Integrated Silicon Solution

IS43QR16256B-075UBLI

Integrated Silicon Solution

IS43QR16256B-075UBLI by Integrated Silicon Solution is a DDR4 DRAM with 256MX16 organization, operating at up to 1333.33 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT40A1G16KH-062EAUT:E by Micron Technology

MT40A1G16KH-062EAUT:E

Micron Technology

Micron Technology's MT40A1G16KH-062EAUT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
MT46H64M32LFBQ-48AIT:C by Micron Technology

MT46H64M32LFBQ-48AIT:C

Micron Technology

Micron Technology's MT46H64M32LFBQ-48AIT:C is a 64MX32 LPDDR1 DRAM with 67108864 words. It operates at 208 MHz, has a memory width of 32 bits, and supports a max clock frequency of 208 MHz. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
M386A8K40BM1-CRC by Samsung

M386A8K40BM1-CRC

Samsung

Samsung's M386A8K40BM1-CRC is a DDR DRAM MODULE with 8GX72 organization, 72 memory width, and 618475290624 bit memory density. It operates synchronously at 1.2V, featuring self-refresh capability for various applications requiring high-speed data processing in microelectronic assemblies.
MT46H64M16LFBF-5IT:B by Micron Technology

MT46H64M16LFBF-5IT:B

Micron Technology

Micron Technology's MT46H64M16LFBF-5IT:B is a DDR1 DRAM with 64MX16 organization, operating at 200 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring fast memory access and low power consumption.
MT40A1G16KH-062EAIT:E by Micron Technology

MT40A1G16KH-062EAIT:E

Micron Technology

Micron Technology's MT40A1G16KH-062EAIT:E is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features common I/O type, synchronous mode, and self-refresh capability. Ideal for applications requiring high-speed memory in automotive and industrial environments.
MT47H64M16HR-25EIT:G by Micron Technology

MT47H64M16HR-25EIT:G

Micron Technology

Micron Technology's MT47H64M16HR-25EIT:G is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage and supports multi-bank page burst access mode. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT48LC8M16A2TG-75LIT:G by Micron Technology

MT48LC8M16A2TG-75LIT:G

Micron Technology

Micron Technology's MT48LC8M16A2TG-75LIT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 133MHz clock frequency. It features common I/O type, self-refresh mode, and industrial temperature grade. Ideal for applications requiring fast memory access and high data density in compact spaces.
MT46V16M16P-75IT:F by Micron Technology

MT46V16M16P-75IT:F

Micron Technology

Micron Technology's MT46V16M16P-75IT:F is a DDR1 DRAM with 16MX16 organization, operating at 133 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT47H256M8EB-25E:C by Micron Technology

MT47H256M8EB-25E:C

Micron Technology

MT47H256M8EB-25E:C by Micron Technology is a 256MX8 DDR2 DRAM with 1.8V supply, operating at 400MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like networking equipment and industrial automation systems.
S27KS0642GABHB020 by Cypress Semiconductor

S27KS0642GABHB020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Technology: CMOS; Terminal Pitch: 1 mm;
K4J10324QD-HJ1A by Samsung

K4J10324QD-HJ1A

Samsung

Samsung's K4J10324QD-HJ1A DDR3 DRAM features 32MX32 organization, 1000 MHz clock frequency, and 32M word code. Ideal for high-performance applications requiring fast data processing and storage with a max supply current of 1000 mA.
AS4C512M16D3LC-12BCN by Alliance Memory

AS4C512M16D3LC-12BCN

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BCN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices like smartphones and tablets.
MT40A1G8SA-062E:R by Micron Technology

MT40A1G8SA-062E:R

Micron Technology

Micron Technology's MT40A1G8SA-062E:R is a DDR4 DRAM with 1.2V supply voltage, 1GX8 organization, and 1073741824 words capacity. It operates synchronously with self-refresh capability and common I/O type. Ideal for applications requiring high memory density and fast data access in thin profile devices.
MT41K128M16JT-125XIT:KTR by Micron Technology

MT41K128M16JT-125XIT:KTR

Micron Technology

Micron Technology's MT41K128M16JT-125XIT:KTR is a DDR3L DRAM with 128MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices such as servers, PCs, and networking equipment.